IRFR120ZTRLPBF International Rectifier, IRFR120ZTRLPBF Datasheet

MOSFET N-CH 100V 8.7A DPAK

IRFR120ZTRLPBF

Manufacturer Part Number
IRFR120ZTRLPBF
Description
MOSFET N-CH 100V 8.7A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFR120ZTRLPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 5.2A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
8.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
310pF @ 25V
Power - Max
35W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
8.7 A
Power Dissipation
35 W
Mounting Style
SMD/SMT
Gate Charge Qg
6.9 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
Description
HEXFET
This HEXFET
processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive
avalanche rating . These features combine to make
this design an extremely efficient and reliable device
for use in a wide variety of applications.
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
JC
JA
JA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
@T
(Tested )
C
C
C
= 25°C Continuous Drain Current, V
= 100°C Continuous Drain Current, V
= 25°C Power Dissipation
®
is a registered trademark of International Rectifier.
®
Pulsed Drain Current
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
Power MOSFET utilizes the latest
Ã
Parameter
Parameter
GS
GS
g
@ 10V
@ 10V
d
i
(Silicon Limited)
h
G
IRFR120ZPbF
D-Pak
HEXFET
See Fig.12a, 12b, 15, 16
Typ.
300 (1.6mm from case )
–––
–––
–––
10 lbf
D
S
-55 to + 175
IRFR120ZPbF
IRFU120ZPbF
y
Max.
in (1.1N
0.23
± 20
8.7
6.1
35
35
18
20
IRFU120ZPbF
®
R
Power MOSFET
DS(on)
V
I-Pak
y
m)
DSS
Max.
I
4.28
110
D
40
= 8.7A
PD - 95772B
= 190m
= 100V
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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IRFR120ZTRLPBF Summary of contents

Page 1

... Operating Junction and J T Storage Temperature Range STG Soldering Temperature, for 10 seconds Mounting Torque, 6- screw Thermal Resistance R Junction-to-Case JC Junction-to-Ambient (PCB mount Junction-to-Ambient JA ® HEXFET is a registered trademark of International Rectifier. www.irf.com G D-Pak IRFR120ZPbF Parameter @ 10V (Silicon Limited 10V Parameter 95772B IRFR120ZPbF IRFU120ZPbF ® ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 175°C 10.0 1 25° ...

Page 4

0V MHZ C iss = SHORTED C rss = C gd 400 C oss = Ciss 300 200 100 Coss ...

Page 5

Junction Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ...

Page 6

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 0.01 0.05 1 0.10 0.1 0.01 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 20 TOP Single Pulse BOTTOM 1% Duty Cycle 5. ...

Page 8

D.U.T + ƒ ‚ -  SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 9

EXAMPL E: THIS IS AN IRFR120 WIT EMBL CODE 1234 16, 1999 EMBL Y LINE "A" Note: "P" sembly ...

Page 10

EXAMPLE: THIS IS AN IRFU120 WITH ASS EMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 ASS EMBLY LINE "A" RWH "P" in ass embly line pos ition indicates "Lead-Free" OR INTERNATIONAL RECTIFIER Notes: 1. For ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

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