IRF7404PBF International Rectifier, IRF7404PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7404PBF
• Description: MOSFET P-CH 20V 6.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7404PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1500pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Current, Drain: -6.7 A
• Gate Charge, Total: 50 nC
• Package Type: SO-8
• Polarization: P-Channel
• Power Dissipation: 2.5 W
• Resistance, Drain To Source On: 0.04 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 100 ns
• Time, Turn-on Delay: 14 ns
• Transconductance, Forward: 6.8 S
• Voltage, Breakdown, Drain To Source: -20 V
• Voltage, Forward, Diode: -1 V
• Voltage, Gate To Source: ±12 V
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 40 mOhms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 6.7 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Fall Time: 65 ns
• Gate Charge Qg: 33.3 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 32 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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100
1000
10
100
0.1
1
10
1
1.5
0.01
TOP
BOTTOM - 1.5V
2.0
-V
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
GS
VGS
DS
0.1
2.5
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
T = 25°C
J
3.0
1
3.5
V
20µs PULSE WIDTH
DS
T = 150°C
20µs PULSE WIDTH
T = 25°C
J
J
= -15V
-1.5V
4.0
10
4.5
5.0
100
A
A
1000
100
0.1
2.0
1.5
1.0
0.5
0.0
10
1
0.01
-60
TOP
BOTTOM - 1.5V
I
D
-40
= -5.3A
T , Junction Temperature (°C)
-V
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
-20
J
VGS
DS
0.1
, Drain-to-Source Voltage (V)
0
20
40
1
60
20µs PULSE WIDTH
T = 150°C
J
80
-1.5V
100 120 140 160
10
V
GS
= -4.5V
100
3
A
A