IRLR014NTRPBF International Rectifier, IRLR014NTRPBF Datasheet - Page 7
IRLR014NTRPBF
Manufacturer Part Number
IRLR014NTRPBF
Description
MOSFET N-CH 55V 10A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLR014NTRPBF.pdf
(10 pages)
Specifications of IRLR014NTRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
140 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
7.9nC @ 5V
Input Capacitance (ciss) @ Vds
265pF @ 25V
Power - Max
28W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
55V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Peak Reflow Compatible (260 C)
Yes
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
www.irf.com
Re-Applied
Voltage
Reverse
Recovery
Current
+
-
D.U.T
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
P.W.
SD
DS
Waveform
Waveform
Ripple ≤ 5%
Body Diode
Fig 14. For N-Channel HEXFETS
Period
Body Diode Forward
+
-
•
•
•
•
Diode Recovery
Current
dv/dt
Forward Drop
•
•
•
di/dt
D =
-
Period
P.W.
+
V
V
I
SD
GS
DD
=10V
+
-
7