IRLML5203GTRPBF International Rectifier, IRLML5203GTRPBF Datasheet - Page 2
IRLML5203GTRPBF
Manufacturer Part Number
IRLML5203GTRPBF
Description
MOSFET P-CH 30V 3A SOT-23-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML5203GTRPBF.pdf
(9 pages)
Specifications of IRLML5203GTRPBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
98 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
510pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
-3A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
98mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-2.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
165 mOhms
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 3 A
Power Dissipation
1.25 W
Mounting Style
SMD/SMT
Gate Charge Qg
9.5 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML5203GTRPBF
IRLML5203GTRPBFTR
IRLML5203GTRPBFTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLML5203GTRPBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRLML5203GTRPBF/H3J
Manufacturer:
IR
Quantity:
20 000
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
d(on)
d(off)
S
rr
r
f
DSS
fs
2
SD
(BR)DSS
GS(th)
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Pulse width ≤ 400µs; duty cycle ≤
Repetitive rating; pulse width limited by
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
-1.0
––– 0.019 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
Surface mounted on FR-4 board, t ≤
3.1
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
510
–––
9.5
2.3
1.6
17
12
12
18
88
52
71
43
–––
-2.5
-1.0
-5.0
100
–––
–––
–––
–––
–––
-1.2
–––
–––
–––
165
3.5
2.4
14
18
98
26
1.3
24
V/°C
mΩ
nC
nC
pF
ns
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0MHz
MOSFET symbol
integral reverse
p-n junction diode.
T
di/dt = -100A/µs
showing the
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -3.0A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= V
= -10V, I
= -24V, V
= -24V, V
= -24V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= -15V
= -10V
= 0V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -1.3A, V
= -1.3A
D
GS
GS
= -250µA
= -3.0A
= -3.0A
= -2.6A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
S
D