IRLML6401GTRPBF International Rectifier, IRLML6401GTRPBF Datasheet

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IRLML6401GTRPBF

Manufacturer Part Number
IRLML6401GTRPBF
Description
MOSFET P-CH 12V 4.3A SOT-23-3
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRLML6401GTRPBF.pdf (8 pages)

Specifications of IRLML6401GTRPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.3A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
4.3A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
P Channel
Continuous Drain Current Id
-4.3A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
50 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 4.3 A
Power Dissipation
1.3 W
Mounting Style
SMD/SMT
Gate Charge Qg
10 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRLML6401GTRPBF
IRLML6401GTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRLML6401GTRPBF
Manufacturer:
International Rectifier
Quantity:
36 233
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRLML6401GTRPBF/F3G
Manufacturer:
IR
Quantity:
20 000
www.irf.com
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These P-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Thermal Resistance
V
I
I
I
P
P
E
V
T
R
D
D
DM
AS
GS
J,
DS
D
D
θJA
@ T
@ T
1.8V Gate Rated
Ultra Low On-Resistance
P-Channel MOSFET
SOT-23 Footprint
Low Profile (<1.1mm)
Available in Tape and Reel
Fast Switching
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
®
power MOSFETs are well known for, provides
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Maximum Junction-to-Ambientƒ
Parameter
Parameter
GS
GS
@ -4.5V
@ -4.5V
* 

Typ.
75
HEXFET Power MOSFET
-55 to + 150

'
Max.
± 8.0
0.01
-4.3
-3.4
-12
-34
1.3
0.8
33
Micro3™
R
Max.
DS(on)
V
100
DSS
= -12V
= 0.05Ω
07/22/08
Units
Units
W/°C
mJ
°C
V
A
V
1

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IRLML6401GTRPBF Summary of contents

Page 1

... Gate Rated l Lead-Free l Halogen-Free l These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design ® that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150°C 10.0 1 -12V ...

Page 4

0V MHZ C iss = rss = C gd 1000 C oss = Ciss 800 600 400 Coss Crss ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...

Page 6

Id = -4.3A 0.04 0.03 0.02 1.0 2.0 3.0 4.0 -V GS, Gate -to -Source Voltage ( V ) Fig 12. Typical On-Resistance Vs. Gate Voltage 0.8 0.7 0.6 0.5 0.4 0.3 -75 Fig ...

Page 7

0.15 [0.006 0.10 [0.004 0.20 [0.008 Recommended Footprint 0.972 0.950 0.802 1.900 Micro3 (SOT-23 / ...

Page 8

TR FEED DIRECTION 178.00 ( 7.008 ) MAX. NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR ...

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