PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 9
![MOSFET N-CH 100V 75A TO220AB](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN015-100P,127
Manufacturer Part Number
PSMN015-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-100P127.pdf
(13 pages)
Specifications of PSMN015-100P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055640127::PSMN015-100P::PSMN015-100P
Philips Semiconductors
7. Package outline
Fig 14. SOT78 (TO-220AB).
9397 750 12543
Product data
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
VERSION
OUTLINE
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
1
15.8
15.2
e
D
E
p
REFERENCES
2
e
Rev. 05 — 14 January 2004
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
2.54
e
10 mm
15.0
13.5
L
N-channel TrenchMOS™ Standard level FET
mounting
base
PSMN015-100P/100B
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
PROJECTION
3.8
3.6
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
c
EUROPEAN
p
3.0
2.7
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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