RRH100P03TB1 Rohm Semiconductor, RRH100P03TB1 Datasheet
RRH100P03TB1
Specifications of RRH100P03TB1
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RRH100P03TB1 Summary of contents
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Drive Pch MOSFET RRH100P03 Structure Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Taping Type Code TB Basic ordering unit (pieces) 2500 RRH100P03 Absolute ...
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RRH100P03 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward ...
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RRH100P03 Electrical characteristics curves -10V GS 18 Ta=25 Pulsed V = -4. -4. -3. -3. -2.8V ...
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RRH100P03 100 Ta =25 uls -10. -5. GATE-SOURCE VOLTAGE : -V [V] GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 ...
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RRH100P03 Measurement circuit Fig.1-1 Switching Time Measurement Circuit G(Const Fig.2-1 Gate Charge Measurement Circuit www.rohm.com ○ 2010 ROHM Co., Ltd. All rights reserved ...
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