RP1E050RPTR Rohm Semiconductor, RP1E050RPTR Datasheet - Page 2

• Manufacturer Part Number: RP1E050RPTR
• Description: MOSFET P-CH 30V 5A MPT6
• Manufacturer: Rohm Semiconductor

Specifications of RP1E050RPTR

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 9.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 850pF @ 10V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: MPT6
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 58 mOhms
• Forward Transconductance Gfs (max / Min): 4 S
• Drain-source Breakdown Voltage: - 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Gate-source leakage
Drain-source breakdown voltage V
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transistor admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
*Pulsed
Forward Voltage
*Pulsed
 Electrical characteristics (Ta = 25C)
Body diode characteristics (Source-Drain) (Ta = 25C)
RP1E050RP
Parameter
Parameter
Symbol
Symbol
R
V
l Y
(BR)DSS
C
t
t
I
I
C
GS (th)
DS (on)
C
Q
Q
V
d(on)
d(off)
GSS
DSS
Q
t
t
oss
rss
SD
iss
fs
r
f
gs
gd
g
l
*
*
*
*
*
*
*
*
*
*
Min.
1.0
Min.
30
4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Typ.
850
120
120
9.2
2.4
3.6
36
52
58
25
55
30
9
-
-
-
-
-
-
2/5
Max.
Max.
2.5
1.2
10
50
72
80
1
-
-
-
-
-
-
-
-
-
-
-
-
Unit
Unit
m
nC
nC
nC
A
A
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
V
R
I
D
D
D
D
D
D
D
s
=5A, V
GS
DS
DS
DS
GS
GS
L
G
GS
G
=1mA, V
=5A, V
=2.5A, V
=2.5A, V
=5A, V
=2.5A, V
=5A, V
=6.0
=10
=10
=30V, V
=10V, I
=10V
=20V, V
=0V
=10V
=5V R
Conditions
Conditions
GS
GS
DS
DD
GS
GS
GS
DD
=0V
=10V
L
=10V
D
=3.0
DS
GS
15V
=1mA
=0V
=4.5V
=4.0V
=0V
=0V
15V
2010.07- Rev.B
Data Sheet