RRH040P03TB1 Rohm Semiconductor, RRH040P03TB1 Datasheet
RRH040P03TB1
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RRH040P03TB1 Summary of contents
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Drive Pch MOSFET RRH040P03 Structure Silicon P-channel MOSFET Features 1) Low Gate Charge. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Switching Packaging specifications Package Taping Type Code TB Basic ordering unit (pieces) 2500 RRH040P03 ...
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RRH040P03 Electrical characteristics (Ta = 25C) Parameter Symbol Gate-source leakage I GSS Drain-source breakdown voltage V (BR)DSS Zero gate voltage drain current I DSS Gate threshold voltage V GS (th) Static drain-source on-state ∗ (on) resistance ∗ Forward ...
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RRH040P03 Electrical characteristic curves 10 Ta=25° -10V GS Pulsed V = -4. -4. -3. -3. -2. 0.2 0.4 0.6 ...
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RRH040P03 300 Ta=25°C 250 Pulsed 200 I = -2.0A D 150 I = -4.0A D 100 GATE-SOURCE VOLTAGE : -V GS Fig.10 Static Drain-Source On-State Resistance vs. Gate Source Voltage 10000 Ta=25°C f=1MHz Ciss V ...
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RRH040P03 Measurement circuit D.U. Fig.1-1 Switching Time Measurement Circuit D.U.T. I G(Const Fig.2-1 Gate Charge Measurement ...
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