IRFPS43N50K Vishay, IRFPS43N50K Datasheet
IRFPS43N50K
Specifications of IRFPS43N50K
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IRFPS43N50K Summary of contents
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... A, dI/dt 230 A/μs, V 1.6 mm from case containing terminations are not RoHS compliant, exemptions may apply Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Power MOSFET FEATURES • Low Gate Charge Q 500 Requirement 0.078 • Improved Gate, Avalanche and Dynamic dV/dt 350 Ruggedness 85 • ...
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... IRFPS43N50K, SiHFPS43N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... BOTTOM 4. 20µs PULSE WIDTH T = 150 C J 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K 1000 100 4.5V ° 10 100 4.5V ° 10 100 Vishay Siliconix ° 150 ° 50V DS 20µ ...
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... IRFPS43N50K, SiHFPS43N50K Vishay Siliconix 1000000 0V MHZ C iss = SHORTED C rss = C gd 100000 C oss = 10000 Ciss 1000 Coss 100 Crss 100 Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 48A 100 150 200 Q , Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com ...
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... SINGLE PULSE (THERMAL RESPONSE) 0.001 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Fig. 10a - Switching Time Test Circuit 125 150 V ° Fig. 10b - Switching Time Waveforms Notes: 1. Duty factor ...
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... IRFPS43N50K, SiHFPS43N50K Vishay Siliconix D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Driver + - Fig. 12b - Unclamped Inductive Waveforms 2000 TOP BOTTOM 1500 1000 500 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...
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... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91262. Document Number: 91262 S11-0112-Rev. C, 31-Jan-11 IRFPS43N50K, SiHFPS43N50K Peak Diode Recovery dV/dt Test Circuit + Circuit layout considerations • Low stray inductance • ...
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... D1 0.059 0.098 D2 0.089 0.104 E 0.051 0.063 E1 0.071 0.087 e 0.118 0.128 L 0.031 0.047 L1 0.780 0.819 R Package Information Vishay Siliconix Detail “A” Scale: 2:1 MILLIMETERS INCHES MIN. MAX. MIN. MAX. 15.50 16.10 0.610 0.634 0.70 1.30 0.028 0.051 15.10 16.10 0.594 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...