IRFPS40N50LPBF Vishay, IRFPS40N50LPBF Datasheet - Page 6

• Manufacturer Part Number: IRFPS40N50LPBF
• Description: MOSFET N-CH 500V 46A SUPER247
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFPS40N50LPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 46A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 380nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 25V
• Power - Max: 540W
• Mounting Type: Through Hole
• Package / Case: Super-247
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.1 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 46 A
• Power Dissipation: 540000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 46A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.1Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: Super-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFPS40N50LPBF

IRFPS40N50L, SiHFPS40N50L
Vishay Siliconix
www.vishay.com
6
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1000
100
10
Fig. 12a - Unclamped Inductive Test Circuit
1
Fig. 12b - Unclamped Inductive Waveforms
10
I
AS
R
T
T
Single Pulse
20 V
C
J
G
V
= 25 C °
= 150 C
DS
OPERATION IN THIS AREA LIMITED
V
t
DS
p
°
, Drain-to-Source Voltage (V)
I
AS
D.U.T.
0.01 Ω
L
BY R
t
p
100
DS(on)
V
15 V
DS
Driver
+
- V
10us
100us
1ms
10ms
A
DD
100
2000
1500
1000
500
0
25
V
Fig. 13b - Basic Gate Charge Waveform
GS
12 V
V
Fig. 12d - Maximum Safe Operating Area
Fig. 13a - Gate Charge Test Circuit
V
G
Starting T , Junction Temperature( C)
GS
Same type as D.U.T.
Current regulator
Q
0.2 µF
50
GS
Current sampling resistors
J
3 mA
50 kΩ
Charge
Q
0.3 µF
Q
75
GD
G
I
G
S11-0111-Rev. C, 07-Feb-11
Document Number: 91260
D.U.T.
100
I
D
TOP
BOTTOM
+
-
V
125
DS
°
I D
21A
30A
46A
150