IRFP23N50L Vishay, IRFP23N50L Datasheet - Page 8

• Manufacturer Part Number: IRFP23N50L
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.235 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP23N50L

TO-247AC (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Contour of slot optional.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the
4. Thermal pad contour optional with dimensions D1 and E1.
5. Lead finish uncontrolled in L1.
6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154").
7. Outline conforms to JEDEC outline TO-247 with exception of dimension c.
Document Number: 91360
Revision: 15-Sep-08
ECN: S-81920-Rev. A, 15-Sep-08
DWG: 5971
outermost extremes of the plastic body.
DIM.
D1
A1
A2
b1
b2
b3
b4
b5
c1
A
D
b
c
0.10
19.71
13.08
MIN.
4.65
2.21
1.50
0.99
0.99
1.65
1.65
2.59
2.59
0.38
0.38
3
2 x R
5
MILLIMETERS
(2)
2 x b2
R/2
Q
M
L1
3 x b
B
C
C
A
M
1
MAX.
20.70
5.31
2.59
2.49
1.40
1.35
2.39
2.37
3.43
3.38
0.86
0.76
-
2
b4
E
4
E/2
3
2 x e
0.183
0.087
0.059
0.039
0.039
0.065
0.065
0.102
0.102
0.015
0.015
0.776
0.515
MIN.
S
D
L
INCHES
See view B
MAX.
0.209
0.102
0.098
0.055
0.053
0.094
0.093
0.135
0.133
0.034
0.030
0.815
-
D D E
A
A1
C
View B
A2
D
A
A
E
C
Ø P1
DIM.
C
Ø P
Ø k
D2
E1
L1
Q
R
E
N
S
e
L
Thermal pad
Ø k
Planting
D2
15.29
13.72
14.20
MIN.
0.51
3.71
3.56
5.31
4.52
M
7
MILLIMETERS
-
Package Information
D
ØP
5.46 BSC
7.62 BSC
5.51 BSC
(c)
B
0.254
M
Section C - C, D - D, E - E
A
View A - A
0.01
MAX.
15.87
16.10
(b1, b3, b5)
(b, b2, b4)
1.30
4.29
3.66
7.39
5.69
5.49
E1
-
4
5
M
D
(Datum B)
B
Vishay Siliconix
M
(4)
ØP1
0.300 BSC
0.020
0.602
0.540
0.559
0.146
0.140
0.209
0.178
MIN.
D1
-
c1
0.215 BSC
0.217 BSC
Base metal
5
INCHES
www.vishay.com
0.010
MAX.
0.051
0.625
0.634
0.169
0.144
0.291
0.224
0.216
-
1