IRFP17N50L Vishay, IRFP17N50L Datasheet - Page 2

• Manufacturer Part Number: IRFP17N50L
• Description: MOSFET N-CH 500V 16A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP17N50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 9.9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 2760pF @ 25V
• Power - Max: 220W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 16A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 320mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.32 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16 A
• Power Dissipation: 220 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRFP17N50L

IRFP17N50L, SiHFP17N50L
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. C
www.vishay.com
2
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Effective Output Capacitance
(Energy Related)
Internal Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
C
DS
OSS
OSS
Temperature Coefficient
eff. is a fixed capacitance that gives the same charging time as C
eff. (ER) is a fixed capacitance that stores the same energy as C
J
= 25 °C, unless otherwise noted)
a
C
SYMBOL
This datasheet is subject to change without notice.
oss
SYMBOL
ΔV
C
R
V
oss
C
C
t
t
I
R
I
I
R
R
V
DS(on)
C
C
Q
V
GS(th)
Q
RRM
GSS
eff. (ER)
d(on)
d(off)
I
Q
DSS
g
R
Q
t
DS
SM
t
I
t
t
on
thCS
thJC
DS
oss
oss
SD
thJA
iss
rss
S
rr
fs
gs
gd
r
f
g
g
rr
eff.
/T
J
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
T
T
T
V
V
V
J
J
J
J
GS
GS
GS
V
= 125 °C
= 125 °C
Intrinsic turn-on time is negligible (turn-on is dominated by L
= 25 °C
= 25 °C
DS
T
Reference to 25 °C, I
= 10 V
= 0 V
= 10 V
J
= 400 V, V
= 25 °C, I
R
V
V
V
V
see fig. 14a and 14b
TYP.
V
TEST CONDITIONS
f = 1.0 MHz, see fig. 5
f = 1 MHz, open drain
0.50
OSS
DD
G
DS
DS
DS
GS
OSS
-
-
= 7.5 Ω, V
= 250 V, I
= 500 V, V
= V
= 50 V, I
= 0 V, I
while V
V
T
V
while V
GS
V
J
DS
V
V
S
GS
GS
GS
DS
DS
I
= 25 °C
D
= 16 A, V
= ± 30 V
V
, I
= 25 V,
= 0 V,
= 16 A, V
see fig. 7 and 15
dI/dt = 100 A/μs
= 0 V, T
= 400 V , f = 1.0 MHz
DS
= 1.0 V , f = 1.0 MHz
D
D
DS
D
GS
DS
= 250 μA
D
= 250 μA
= 0 V to 400 V
I
= 9.9 A
GS
D
I
is rising fom 0 % to 80 % V
= 16 A
F
= 10 V
is rising fom 0 % to 80 % V
D
= 9.9 A
= 16 A,
= 0 V
= 1 mA
GS
J
DS
G
= 125 °C
b
= 0 V
b
= 400 V
b
d
MAX.
b
0.56
b
D
S
b
62
-
MIN.
500
3.0
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S11-0446-Rev. B, 14-Mar-11
www.vishay.com/doc?91000
DS
Document Number: 91205
DS
TYP.
2760
3690
.
0.60
0.28
325
159
120
170
220
470
810
1.4
7.3
37
84
21
51
50
28
.
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
1210
0.32
130
250
330
710
5.0
2.0
1.5
S
50
33
59
16
64
11
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
mA
nA
μA
nC
μC
pF
ns
ns
Ω
Ω
V
V
S
A
V