IRFP22N50A Vishay, IRFP22N50A Datasheet

MOSFET N-CH 500V 22A TO-247AC

IRFP22N50A

Manufacturer Part Number

IRFP22N50A

Description

MOSFET N-CH 500V 22A TO-247AC

Manufacturer

Vishay

Datasheets

1.IRFP22N50A.pdf (8 pages)

2.IRFP22N50A.pdf (8 pages)

3.IRFP22N50A.pdf (9 pages)

Specifications of IRFP22N50A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

230 mOhm @ 13A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

22A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

120nC @ 10V

Input Capacitance (ciss) @ Vds

3450pF @ 25V

Power - Max

277W

Mounting Type

Through Hole

Package / Case

TO-247-3 (Straight Leads), TO-247AC

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.23 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

22 A

Power Dissipation

277 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFP22N50A

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Manufacturer:

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ST

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Current page: 1 of 8
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Absolute Maximum Ratings

Applications

Benefits

Typical SMPS Topologies

I

I

I

P

V

dv/dt

T

T

Notes

D

D

DM

www.irf.com

J

STG

D

GS

@ T

@ T

@T

Drive Requirement

dv/dt Ruggedness

Avalanche Voltage and Current

Switch Mode Power Supply (SMPS)

UninterruptIble Power Supply

High Speed Power Switching

Low Gate Charge Qg results in Simple

Improved Gate, Avalanche and Dynamic

Fully Characterized Capacitance and

Full Bridge Converters

Power Factor Correction Boost

C

C

C

= 25°C

= 100°C

= 25°C

through

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

Power Dissipation

are on page 8

Parameter

SMPS MOSFET

GS

GS

@ 10V

@ 10V

V

500V

DSS

300 (1.6mm from case )

HEXFET

10 lbf•in (1.1N•m)

IRFP22N50A

-55 to + 150

R

Max.

277

± 30

2.2

4.8

22

14

88

DS(on)

TO-247AC

0.23

®

Power MOSFET

max

PD- 91833C

Units

W/°C

V/ns

22A

°C

W

A

V

I

D

1

12/15/99

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