IRFP460PBF Vishay, IRFP460PBF Datasheet - Page 2
![MOSFET N-CH 500V 20A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFP460PBF
Manufacturer Part Number
IRFP460PBF
Description
MOSFET N-CH 500V 20A TO-247AC
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRFP460PBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
4200pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.27 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
20 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
270mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.27Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±20V
Drain Current (max)
20A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
TO-247AC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFP460PBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFP460PBF
Manufacturer:
MOLEX
Quantity:
20 002
Part Number:
IRFP460PBF
Manufacturer:
IR
Quantity:
20 000
IRFP460, SiHFP460
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
R
J
DS
GS
GS
T
= 25 °C, I
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
Reference to 25 °C, I
J
= 4.3 Ω, R
= 400 V, V
= 10 V
= 10 V
= 25 °C, I
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
0.24
TEST CONDITIONS
DS
DS
GS
DS
-
-
= 250 V, I
= 500 V, V
= V
= 0 V, I
= 50 V, I
F
V
V
V
GS
= 20A, dI/dt = 100 A/µs
DS
S
GS
GS
D
GS
= 20 A, V
= ± 20 V
I
= 13 Ω, see fig. 10
= 25 V,
, I
D
= 0 V,
= 0 V, T
D
= 20 A, V
D
see fig. 6 and 13
D
= 250 µA
D
= 250 µA
GS
= 12 A
= 20 A ,
I
D
D
= 0 V
= 12 A
GS
= 1 mA
J
G
G
= 125 °C
DS
b
= 0 V
= 400 V
b
MAX.
D
S
b
0.45
D
S
b
40
b
-
b
MIN.
500
2.0
13
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Document Number: 91237
S-81360-Rev. A, 28-Jul-08
TYP.
4200
0.63
870
350
110
570
5.0
5.7
18
59
58
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.27
S
250
210
110
860
4.0
1.8
8.6
25
29
20
80
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V