IRFPE30 Vishay, IRFPE30 Datasheet - Page 7
![MOSFET N-CH 800V 4.1A TO-247AC](/photos/5/40/54088/to-247ac_sml.jpg)
IRFPE30
Manufacturer Part Number
IRFPE30
Description
MOSFET N-CH 800V 4.1A TO-247AC
Manufacturer
Vishay
Datasheet
1.IRFPE30.pdf
(8 pages)
Specifications of IRFPE30
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 2.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
78nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFPE30
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFPE30
Manufacturer:
IR
Quantity:
12 500
Company:
Part Number:
IRFPE30PBF
Manufacturer:
IR
Quantity:
5 600
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91246.
Document Number: 91246
S09-0065-Rev. A, 02-Feb-09
Re-applied
voltage
Reverse
recovery
current
+
-
R
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
= 5 V for logic level and 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Period
Body diode forward
+
-
Fig. 14 - For N-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
V
V
I
SD
GS
DD
= 10 V*
IRFPE30, SiHFPE30
+
-
V
DD
Vishay Siliconix
www.vishay.com
7