IRFBF30 Vishay, IRFBF30 Datasheet - Page 2

• Manufacturer Part Number: IRFBF30
• Description: MOSFET N-CH 900V 3.6A TO-220AB
• Manufacturer: Vishay

Specifications of IRFBF30

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.7 Ohm @ 2.2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBF30

IRFBF30, SiHFBF30
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
R
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
thCS
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
V
V
J
GS
GS
R
= 25 °C, I
DS
T
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= 10 V
= 10 V
= 12 Ω, R
= 25 °C, I
= 720 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DS
DD
TEST CONDITIONS
0.50
DS
DS
GS
-
-
= 100 V, I
= 900 V, V
= 450 V, I
F
= V
= 0 V, I
V
V
= 3.6 A, dI/dt = 100 A/µs
V
GS
D
DS
S
GS
I
GS
GS
D
= 120 Ω, see fig. 10
= 3.6 A, V
= ± 20 V
, I
= 25 V,
= 3.6 A, V
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
D
= 2.2 A
= 3.6 A,
= 2.2 A
D
= 0 V
GS
= 1 mA
J
DS
G
= 125 °C
G
= 0 V
b
= 360 V,
b
MAX.
D
S
b
b
D
S
1.0
b
62
-
b
MIN.
900
2.0
2.3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0014-Rev. A, 19-Jan-09
Document Number: 91122
TYP.
1200
320
200
430
1.1
4.5
7.5
1.4
14
25
90
30
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
100
500
650
4.0
3.7
3.6
1.8
2.1
78
10
42
14
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V