IRFR420 Vishay, IRFR420 Datasheet - Page 5
![MOSFET N-CH 500V 2.4A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR420
Manufacturer Part Number
IRFR420
Description
MOSFET N-CH 500V 2.4A DPAK
Manufacturer
Vishay
Datasheet
1.IRFR420PBF.pdf
(8 pages)
Specifications of IRFR420
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.4A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
360pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
2.4A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.4 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFR420
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR420
Manufacturer:
IR
Quantity:
55 000
Company:
Part Number:
IRFR420APBF
Manufacturer:
IR
Quantity:
150 000
Company:
Part Number:
IRFR420ATF
Manufacturer:
RAYCHEM
Quantity:
2 869
Company:
Part Number:
IRFR420ATRPBF
Manufacturer:
ALTERA
Quantity:
101
Part Number:
IRFR420TR
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFR420TRLPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
IRFR420TRPBF
Manufacturer:
IR
Quantity:
20 000
Document Number: 91275
S10-1135-Rev. C, 10-May-10
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
g
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
0.01 Ω
L
IRFR420, IRFU420, SiHFR420, SiHFU420
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5