IRF840LC Vishay, IRF840LC Datasheet - Page 5

• Manufacturer Part Number: IRF840LC
• Description: MOSFET N-CH 500V 8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF840LC

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.65 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF840LC

Document Number: 91067
S-83030-Rev. A, 19-Jan-09
Vary t
required I
91067_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
8.0
6.0
4.0
2.0
0.0
91067_11
AS
25
R
10 V
G
10
0.1
10
-2
1
V
10
DS
50
T
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
C
t
p
, Case Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
75
I
AS
D.U.T.
0.01 Ω
L
10
100
-4
Single Pulse
(Thermal Response)
125
10
+
-
150
t
V
-3
1
, Rectangular Pulse Duration (s)
DD
10
-2
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
IRF840LC, SiHF840LC
10 V
V
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
t
p
1
j
= P
P
D.U.T.
DM
DM
Vishay Siliconix
R
x Z
D
t
d(off)
V
t
1
1
thJC
DS
/t
2
t
2
+ T
t
f
V
+
-
C
10
www.vishay.com
DD
V
DD
5