SUM85N15-19-E3 Vishay, SUM85N15-19-E3 Datasheet - Page 4

MOSFET N-CH 150V 85A D2PAK

SUM85N15-19-E3

Manufacturer Part Number
SUM85N15-19-E3
Description
MOSFET N-CH 150V 85A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM85N15-19-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
19 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4750pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.019 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
85 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
85A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2V
Power Dissipation Pd
3.75W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM85N15-19-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUM85N15-19-E3
Manufacturer:
HITACHI
Quantity:
1 928
Part Number:
SUM85N15-19-E3
Manufacturer:
VISHAY
Quantity:
30 000
Company:
Part Number:
SUM85N15-19-E3
Quantity:
70 000
SUM85N15-19
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
100
0.00001
0.1
10
−50 −25
1
On-Resistance vs. Junction Temperature
V
I
I
AV
D
GS
= 30 A
(A) @ T
0.0001
= 10 V
T
0
Avalanche Current vs. Time
J
− Junction Temperature (_C)
A
= 150_C
25
0.001
50
t
in
(Sec)
I
AV
75
(A) @ T
0.01
100
A
= 25_C
125
0.1
150
175
1
100
190
180
170
160
150
140
10
1
0
−50 −25
I
Source-Drain Diode Forward Voltage
D
= 1.0 mA
V
T
SD
Drain Source Breakdown vs.
T
J
0
J
= 150_C
0.3
− Junction Temperature (_C)
− Source-to-Drain Voltage (V)
Junction Temperature
25
50
0.6
75
100
S-32523—Rev. B, 08-Dec-03
T
Document Number: 71703
J
= 25_C
0.9
125
150
175
1.2

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