IRF9540 Vishay, IRF9540 Datasheet - Page 6

• Manufacturer Part Number: IRF9540
• Description: MOSFET P-CH 100V 19A TO-220AB
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF9540

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -19A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.2Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 19A
• Power Dissipation: 150W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220AB
• Configuration: Single
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 57 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 73 ns
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
• Other names: *IRF9540

IRF9540, SiHF9540
Vishay Siliconix
www.vishay.com
6
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
- 10 V
Fig. 13a - Basic Gate Charge Waveform
AS
V
G
R
- 10 V
G
Q
V
GS
DS
t
p
Charge
Q
Q
GD
I
G
AS
D.U.T
0.01 Ω
L
91078_12c
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
1600
1200
2000
This datasheet is subject to change without notice.
800
400
0
25
V
DD
Starting T
+
-
= - 25 V
V
50
DD
J
75
, Junction Temperature (°C)
100
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
V
I
150
AS
DS
12 V
Fig. 13b - Gate Charge Test Circuit
V
- 7.8 A
- 13 A
- 19 A
GS
I
Same type as D.U.T.
D
Current regulator
175
0.2 µF
- 3 mA
Current sampling resistors
50 kΩ
t
0.3 µF
p
I
G
S11-0512-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
Document Number: 91078
D.U.T.
V
I
D
DS
+
-
V
V
DS
DD