IRFP344 Vishay, IRFP344 Datasheet - Page 2

• Manufacturer Part Number: IRFP344
• Description: MOSFET N-CH 450V 9.5A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP344

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N Channel
• Peak Reflow Compatible (260 C): No
• Drain Source On Resistance @ 10v: 630mohm
• Thermal Resistance: 0.83°C/W
• Current Rating: 9.5A
• Gate-to-drain Charge: 27.3nC
• Leaded Process Compatible: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP344

IRFP344, SiHFP344
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
T
V
J
V
V
R
DS
T
= 25 °C, I
GS
GS
Intrinsic turn-on time is negligible (turn-on is dominated by L
G
J
Reference to 25 °C, I
= 9.1 Ω, R
= 25 °C, I
= 360 V, V
= 10 V
= 10 V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
0.24
TEST CONDITIONS
DS
DS
GS
DS
-
-
= 225 V, I
F
= 450 V, V
= V
= 50 V, I
= 0 V, I
V
V
= 8.8 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
GS
D
GS
= 9.5 A, V
I
= ± 20 V
= 25 Ω, see fig. 10
D
= 25 V,
, I
= 0 V,
= 0 V, T
= 8.8 A, V
D
D
see fig. 6 and 13
D
= 250 µA
D
= 250 µA
GS
= 5.7 A
I
= 8.8 A,
D
D
= 0 V
= 5.7 A
GS
= 1 mA
J
G
G
= 125 °C
DS
b
= 0 V
= 360 V,
b
MAX.
D
S
b
0.83
D
S
b
40
b
-
b
MIN.
450
2.0
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0006-Rev. A, 19-Jan-09
Document Number: 91223
TYP.
1400
0.59
370
140
490
8.7
5.0
3.2
28
58
27
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
0.63
S
250
740
4.0
9.5
2.0
4.8
25
80
12
41
38
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V