IRFBC40 Vishay

MOSFET N-CH 600V 6.2A TO-220AB

IRFBC40

Manufacturer Part Number

IRFBC40

Description

MOSFET N-CH 600V 6.2A TO-220AB

Manufacturer

Vishay

Specifications of IRFBC40

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.2 Ohm @ 3.7A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

6.2A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

1300pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.2 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

6.2 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRFBC40

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

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Bonase Electronics (HK) Co., Limited

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