IRF9Z24 Vishay, IRF9Z24 Datasheet - Page 3

• Manufacturer Part Number: IRF9Z24
• Description: MOSFET P-CH 60V 11A TO-220AB
• Manufacturer: Vishay

Specifications of IRF9Z24

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 280 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 570pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9Z24

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91090
S09-0015-Rev. A, 19-Jan-09
91090_01
91090_02
10
10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
1
0
10
1
0
10
Bottom
-1
Top
-1
Top
Bottom
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS ,
GS
V
, Drain-to-Source Voltage (V)
GS
Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
25 °C
175 °C
10
10
- 4.5 V
1
1
- 4.5 V
C
C
= 175 °C
= 25 °C
91090_03
91090_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160 180
4
I
V
Fig. 3 - Typical Transfer Characteristics
D
GS
= - 11 A
= - 10 V
- V
5
T
GS ,
J ,
Junction Temperature (°C)
25
Gate-to-Source Voltage (V)
IRF9Z24, SiHF9Z24
°
6
C
7
175
Vishay Siliconix
20 µs Pulse Width
V
°
DS
8
C
= -
25 V
9
www.vishay.com
10
3