... DS DS(on) 0.053 200 0.054 TO-263 Top View Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...
... SUM36N20-54P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
... V - Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Document Number: 74295 S10-1053-Rev. C, 03-May- 0.065 0.060 25 °C 0.055 125 °C 0.050 0.045 0.040 4200 3360 2520 1680 T = 125 ° SUM36N20-54P Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...
... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74295. Document Number: 74295 S10-1053-Rev. C, 03-May-10 100 0.1 100 125 150 0. Square Wave Pulse Duration (s) SUM36N20-54P Vishay Siliconix Limited (on °C C Single Pulse 1 0 100 ...
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