SUM36N20-54P-E3 Vishay, SUM36N20-54P-E3 Datasheet

MOSFET N-CH 200V 36A D2PAK

SUM36N20-54P-E3

Manufacturer Part Number
SUM36N20-54P-E3
Description
MOSFET N-CH 200V 36A D2PAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SUM36N20-54P-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
53 mOhm @ 20A, 15V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
127nC @ 15V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
3.12W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.053 Ohm @ 15 V
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
36 A
Power Dissipation
3120 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
36A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
54mohm
Rds(on) Test Voltage Vgs
25V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SUM36N20-54P-E3
SUM36N20-54P-E3TR
Notes:
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR-4 material).
Document Number: 74295
S10-1053-Rev. C, 03-May-10
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
V
DS
200
(V)
Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free)
0.053 at V
0.054 at V
R
DS(on)
GS
GS
J
a
()
G
Top View
TO-263
= 175 °C)
= 15 V
= 10 V
a
D
c
N-Channel 200 V (D-S) MOSFET
S
I
D
36
36
(A)
C
Q
= 25 °C, unless otherwise noted
g
(Typ.)
57
T
T
T
L = 0.1 mH
T
C
A
C
C
= 100 °C
= 25 °C
= 25 °C
= 25 °C
c
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Power Supply
• Lighting Systems
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFETs
G
N-Channel MOSFET
- 55 to 175
SUM36N20-54P
Limit
Limit
± 25
166
22.6
3.12
200
0.75
36
80
20
20
40
D
S
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
RoHS
W
COMPLIANT
V
A
1

Related parts for SUM36N20-54P-E3

SUM36N20-54P-E3 Summary of contents

Page 1

... DS DS(on) 0.053 200 0.054 TO-263 Top View Ordering Information: SUM36N20-54P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Single Pulse Avalanche Current a Single Pulse Avalanche Energy a Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SUM36N20-54P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... V - Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage Document Number: 74295 S10-1053-Rev. C, 03-May- 0.065 0.060 25 °C 0.055 125 °C 0.050 0.045 0.040 4200 3360 2520 1680 T = 125 ° SUM36N20-54P Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics Drain Current (A) D On-Resistance vs. Drain Current ...

Page 4

... SUM36N20-54P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 Total Gate Charge (nC) g Gate Charge 100 10 T =150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 250 240 230 220 210 200 190 - Temperature Junction (°C) J Drain Source Breakdown vs ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?74295. Document Number: 74295 S10-1053-Rev. C, 03-May-10 100 0.1 100 125 150 0. Square Wave Pulse Duration (s) SUM36N20-54P Vishay Siliconix Limited (on °C C Single Pulse 1 0 100 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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