IRFI620G Vishay, IRFI620G Datasheet

MOSFET N-CH 200V 4.1A TO220FP

IRFI620G

Manufacturer Part Number
IRFI620G
Description
MOSFET N-CH 200V 4.1A TO220FP
Manufacturer
Vishay
Datasheet

Specifications of IRFI620G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Transistor Polarity
N Channel
Continuous Drain Current Id
4.1A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
800mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Configuration
Single
Resistance Drain-source Rds (on)
0.8 Ohms
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.1 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant, Contains lead / RoHS non-compliant
Other names
*IRFI620G

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFI620G
Manufacturer:
IR
Quantity:
5 000
Part Number:
IRFI620G
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRFI620GPBF
Manufacturer:
SEMT
Quantity:
7 162
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91146
S-81292-Rev. A, 16-Jun-08
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ 5.2 A, dI/dt ≤ 95 A/µs, V
= 50 V, starting T
TO-220 FULLPAK
(Ω)
a
J
G
= 25 °C, L = 8.9 mH, R
D
c
S
a
a
DD
b
V
≤ V
GS
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
200
3.0
7.9
14
G
= 25 Ω, I
D
S
C
Power MOSFET
= 25 °C, unless otherwise noted
V
0.80
GS
AS
6-32 or M3 screw
at 10 V
= 4.1 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220 FULLPAK
IRFI620GPbF
SiHFI620G-E3
IRFI620G
SiHFI620G
= 100 °C
= 25 °C
FEATURES
• Isolated Package
• High Voltage Isolation = 2.5 kV
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
f = 60 Hz)
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
I
DM
AR
DS
GS
AS
AR
D
D
stg
IRFI620G, SiHFI620G
design,
- 55 to + 150
LIMIT
300
± 20
0.24
200
100
4.1
2.6
4.1
3.0
5.0
1.1
16
30
10
low
RMS
d
Vishay Siliconix
(t = 60 s;
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
and
1

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IRFI620G Summary of contents

Page 1

... TO-220 FULLPAK IRFI620GPbF SiHFI620G-E3 IRFI620G SiHFI620G = 25 °C, unless otherwise noted ° 100 ° °C C for screw = 25 Ω 4.1 A (see fig. 12 ≤ 150 °C. J IRFI620G, SiHFI620G Vishay Siliconix ( RMS device design, low on-resistance SYMBOL LIMIT V 200 DS V ± 4 2 0.24 E 100 ...

Page 2

... IRFI620G, SiHFI620G Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic ...

Page 3

... TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig Typical Output Characteristics, T Fig Typical Output Characteristics, T Document Number: 91146 S-81292-Rev. A, 16-Jun- °C Fig Typical Transfer Characteristics C = 150 °C Fig Normalized On-Resistance vs. Temperature C IRFI620G, SiHFI620G Vishay Siliconix www.vishay.com 3 ...

Page 4

... IRFI620G, SiHFI620G Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage Fig Maximum Safe Operating Area Document Number: 91146 S-81292-Rev. A, 16-Jun-08 ...

Page 5

... Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91146 S-81292-Rev. A, 16-Jun-08 IRFI620G, SiHFI620G Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms ...

Page 6

... IRFI620G, SiHFI620G Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ 0.2 µF 0.3 µ D.U. Current sampling resistors Fig. 13b - Gate Charge Test Circuit Document Number: 91146 ...

Page 7

... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRFI620G, SiHFI620G Vishay Siliconix + + www.vishay.com 7 ...

Page 8

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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