IRF730A Vishay, IRF730A Datasheet - Page 4

• Manufacturer Part Number: IRF730A
• Description: MOSFET N-CH 400V 5.5A TO-220AB
• Manufacturer: Vishay

Specifications of IRF730A

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 3.3A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 600pF @ 25V
• Power - Max: 74W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1 Ohms
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 74 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF730A

IRF730A, SiHF730A
Vishay Siliconix
www.vishay.com
4
91045_05
91045_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
10
10
10
10
10
20
16
12
1
8
4
0
5
4
3
2
1
0
I
D
= 5.5 A
V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
V
, Total Gate Charge (nC)
DS
10
V
= 80 V
DS
10
V
C
C
C
= 200 V
GS
iss
rss
oss
V
= C
= 0 V, f = 1 MHz
= C
DS
= C
= 320 V
gs
gd
15
ds
+ C
+ C
10
2
gd
gd
For test circuit
see figure 13
, C
C
C
C
iss
oss
rss
ds
20
Shorted
10
25
3
91045_08
91045_07
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
0.1
10
0.1
10
10
1
1
2
2
10
0.4
Fig. 8 - Maximum Safe Operating Area
V
V
DS
SD
Operation in this area limited
T
, Drain-to-Source Voltage (V)
0.6
, Source-to-Drain Voltage (V)
J
= 150
T
T
Single Pulse
C
J
°
by R
= 150 °C
= 25 °C
C
10
0.8
DS(on)
2
T
J
S-83000-Rev. A, 19-Jan-09
= 25
Document Number: 91045
°
C
1.0
V
10
100
1
10
GS
ms
µs
ms
= 0 V
µs
10
1.2
3