IRF624 Vishay, IRF624 Datasheet - Page 6
![MOSFET N-CH 250V 4.4A TO-220AB](/photos/5/29/52977/698-to-220ab_sml.jpg)
IRF624
Manufacturer Part Number
IRF624
Description
MOSFET N-CH 250V 4.4A TO-220AB
Manufacturer
Vishay
Datasheet
1.IRF624.pdf
(8 pages)
Specifications of IRF624
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 2.6A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
4.4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
260pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.4 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF624
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF624A
Manufacturer:
IR
Quantity:
12 500
Part Number:
IRF624A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
IRF624B
Manufacturer:
FSC
Quantity:
2 000
IRF624, SiHF624
Vishay Siliconix
www.vishay.com
6
10 V
Fig. 13a - Basic Gate Charge Waveform
V
G
Q
GS
Charge
Q
Q
GD
G
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91029_12c
120
240
200
160
80
40
0
25
V
DD
Starting T
= 50 V
50
J
, Junction Temperature (°C)
75
100
Top
Bottom
125
12 V
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
2.0 A
2.8 A
4.4 A
Current regulator
I
D
150
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
I
G
S-82998-Rev. A, 12-Jan-09
Document Number: 91029
D.U.T.
I
D
+
-
V
DS