IRFR320TR Vishay, IRFR320TR Datasheet - Page 4
![MOSFET N-CH 400V 3.1A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR320TR
Manufacturer Part Number
IRFR320TR
Description
MOSFET N-CH 400V 3.1A DPAK
Manufacturer
Vishay
Datasheet
1.IRFU320.pdf
(8 pages)
Specifications of IRFR320TR
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.8 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR320TRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFR320TRRPBF
Manufacturer:
RENESAS
Quantity:
151
Part Number:
IRFR320TRRPBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
IRFR320, IRFU320, SiHFR320, SiHFU320
Vishay Siliconix
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
Document Number: 91273
4
S-82991-Rev. B, 12-Jan-09