IRFD024PBF Vishay, IRFD024PBF Datasheet

MOSFET N-CH 60V 2.5A 4-DIP

IRFD024PBF

Manufacturer Part Number
IRFD024PBF
Description
MOSFET N-CH 60V 2.5A 4-DIP
Manufacturer
Vishay
Type
Power MOSFETr
Datasheets

Specifications of IRFD024PBF

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
640pF @ 25V
Power - Max
1.3W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Minimum Operating Temperature
- 55 C
Configuration
Single Dual Drain
Resistance Drain-source Rds (on)
0.1 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.5 A
Power Dissipation
1300 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
4
Package Type
HexDIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFD024PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFD024PBF
Manufacturer:
NXP
Quantity:
3 839
Company:
Part Number:
IRFD024PBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91126
S10-2466-Rev. C, 25-Oct-10
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
 17 A, dI/dt  140 A/μs, V
= 25 V, starting T
()
D
HVMDIP
S
a
G
J
= 25 °C, L = 16 mH, R
c
b
DD
V
GS
 V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
 175 °C.
5.8
60
25
11
g
= 25 , I
D
S
A
= 25 °C, unless otherwise noted)
Power MOSFET
V
0.10
GS
AS
at 10 V
= 2.5 A (see fig. 12).
T
for 10 s
A
= 25 °C
T
T
A
A
HVMDIP
IRFD024PbF
SiHFD024-E3
IRFD024
SiHFD024
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• For Automatic Insertion
• End Stackable
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain serves as a thermal
link to the mounting surface for power dissipation levels up
to 1 W.
SYMBOL
T
dV/dt
J
V
V
E
I
, T
P
device
DM
I
GS
DS
AS
D
D
stg
IRFD024, SiHFD024
design,
- 55 to + 175
0.0083
LIMIT
300
± 20
2.5
1.8
1.3
4.5
60
20
91
low
Vishay Siliconix
d
on-resistance
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
°C
W
V
A
Available
and
1

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IRFD024PBF Summary of contents

Page 1

... The 4 pin DIP package is a low cost machine-insertable S case style which can be stacked in multiple combinations on N-Channel MOSFET standard 0.1" pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels HVMDIP IRFD024PbF SiHFD024-E3 IRFD024 SiHFD024 = 25 °C, unless otherwise noted °C ...

Page 2

... IRFD024, SiHFD024 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance ...

Page 3

... TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Fig Typical Output Characteristics Fig Typical Output Characteristics, T Document Number: 91126 S10-2466-Rev. C, 25-Oct- ° ° 175 °C = 175 °C Fig Normalized On-Resistance vs. Temperature A IRFD024, SiHFD024 Vishay Siliconix Fig Typical Transfer Characteristics www.vishay.com 3 ...

Page 4

... IRFD024, SiHFD024 Vishay Siliconix Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig Typical Source-Drain Diode Forward Voltage ° 175 °C J SINGLE PULSE Fig Maximum Safe Operating Area Document Number: 91126 S10-2466-Rev. C, 25-Oct-10 ...

Page 5

... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Document Number: 91126 S10-2466-Rev. C, 25-Oct- Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit d(on) Fig. 10b - Switching Time Waveforms t , Rectangular Pulse Duration (s) 1 IRFD024, SiHFD024 Vishay Siliconix D.U. d(off www.vishay.com 5 ...

Page 6

... IRFD024, SiHFD024 Vishay Siliconix Vary t to obtain p required I AS D.U 0. Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms Current regulator Same type as D.U.T. ...

Page 7

... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91126. Document Number: 91126 S10-2466-Rev ...

Page 8

... E min. 0.100 [2.54] typ. E max. INCHES MAX. 0.330 0.425 0.290 Package Information Vishay Siliconix 0.197 [5.00] 0.189 [4.80] 0.180 [4.57] 0.160 [4.06] 0.160 [4.06] 0.140 [3.56] 0.024 [0.60 0.020 [0.51] MILLIMETERS MIN. MAX. 7.87 8 ...

Page 9

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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