IRF520 Vishay, IRF520 Datasheet - Page 3

• Manufacturer Part Number: IRF520
• Description: MOSFET N-CH 100V 9.2A TO-220AB
• Manufacturer: Vishay

Specifications of IRF520

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 360pF @ 25V
• Power - Max: 60W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 9.2 A
• Power Dissipation: 60 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF520; IRF520IR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91017
S-81240-Rev. A, 16-Jun-08
91017_02
91017_01
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
10
1
0
10
-1
Top
Bottom
-1
Top
Bottom
V
V
DS ,
DS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
V
V
GS
GS
Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
C
20 µs Pulse Width
T
C
=
10
=
175 °C
10
1
25 °C
1
C
C
= 175 °C
= 25 °C
4.5 V
4.5 V
91017_04
91017_03
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
- 60 - 40 - 20 0
1
0
4
I
V
D
GS
= 9.2 A
Fig. 3 - Typical Transfer Characteristics
= 10 V
V
T
5
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
20 40 60 80 100 120 140 160
6
25
°
IRF520, SiHF520
C
7
175
°
Vishay Siliconix
20 µs Pulse Width
V
C
8
DS
=
50 V
9
www.vishay.com
180
10
3