IRLD110 Vishay, IRLD110 Datasheet - Page 5

• Manufacturer Part Number: IRLD110
• Description: MOSFET N-CH 100V 1A 4-DIP
• Manufacturer: Vishay

Specifications of IRLD110

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 540 mOhm @ 600mA, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 250pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLD110

Document Number: 91309
S10-2465-Rev. C, 08-Nov-10
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
T
A
, Ambient Temperature (°C)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
t
t
1
1
, Rectangular Pulse Duration (s)
, Rectangular Pulse Duration (s)
90 %
10 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
V
IRLD110, SiHLD110
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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