IRF840ASTRLPBF Vishay, IRF840ASTRLPBF Datasheet - Page 4

• Manufacturer Part Number: IRF840ASTRLPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840ASTRLPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

IRF840AS/LPbF
Document Number: 91066
100
0.1
10
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
V

T = 150 C
Drain-to-Source Voltage
SD
J
0.5
,Source-to-Drain Voltage (V)
Forward Voltage
°
0.8

T = 25 C
J
°

1.1
V
GS
= 0 V
1.4
100
0.1
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
10
0


I =
T
T
Single Pulse
D
Fig 6. Typical Gate Charge Vs.
C
J
= 25 C
= 150 C

7.4 A
8.0
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
V
DS
Q , Total Gate Charge (nC)
°
°
G
10
, Drain-to-Source Voltage (V)
100

V
V
V
BY R
DS
DS
DS
= 400V
= 250V
= 100V
20
DS(on)


1 0us

1 00us

1 ms

1 0ms
FOR TEST CIRCUIT
SEE FIGURE
1000
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30
13
10000
4
40