IRLL014TR Vishay, IRLL014TR Datasheet - Page 3

• Manufacturer Part Number: IRLL014TR
• Description: MOSFET N-CH 60V 2.7A SOT223
• Manufacturer: Vishay

Specifications of IRLL014TR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 8.4nC @ 5V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Document Number: 91319
S10-1257-Rev. C, 31-May-10
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
10
10
10
10
-2
-1
-2
10
-1
1
Bottom
0
10
Bottom
1
0
Top
Top
-1
-1
2.75 V
V
V
2.75 V
7.5 V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
7.5 V
5.0 V
4.0 V
3.5 V
3.0 V
2.5 V
GS
GS
V
V
DS
DS
, Drain-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
10
10
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
2.25 V
2.25 V
C
= 150 °C
C
= 25 °C
10
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
-2
-1
-3
0
1
- 60 - 40 - 20 0
2
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= 10 A
150 °C
= 10 V
2.5
V
T
GS ,
J ,
25 °C
Junction Temperature (°C)
Gate-to-Source Voltage (V)
IRLL014, SiHLL014
3
20 40 60 80 100 120 140 160
3.5
Vishay Siliconix
20 µs Pulse Width
V
DS
4
=
25 V
4.5
www.vishay.com
5
3