IRFD024 Vishay, IRFD024 Datasheet - Page 6

• Manufacturer Part Number: IRFD024
• Description: MOSFET N-CH 60V 2.5A 4-DIP
• Manufacturer: Vishay

Specifications of IRFD024

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Input Capacitance (ciss) @ Vds: 640pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD024

IRFD024, SiHFD024
Vishay Siliconix
www.vishay.com
6
Vary t
required I
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
V
Fig. 13a - Basic Gate Charge Waveform
AS
GS
V
G
R
10 V
G
Q
GS
V
DS
t
p
Charge
Q
Q
GD
G
I
AS
D.U.T
0.01 Ω
L
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
AS
12 V
DS
V
Fig. 13b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Current regulator
0.2 µF
Current sampling resistors
3 mA
50 kΩ
0.3 µF
t
p
I
G
S-81352-Rev. A, 16-Jun-08
Document Number: 91126
D.U.T.
V
I
D
DS
+
-
V
V
DD
DS