IRFBC30ASTRLPBF Vishay, IRFBC30ASTRLPBF Datasheet
IRFBC30ASTRLPBF
Specifications of IRFBC30ASTRLPBF
Related parts for IRFBC30ASTRLPBF
IRFBC30ASTRLPBF Summary of contents
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... Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptible Power Supply • High Speed Power Switching TYPICAL SMPS TOPOLOGIES S • Single Transistor Flyback N-Channel MOSFET 2 PAK (TO-263) D PAK (TO-263) SiHFBC30ASTRL-GE3 a IRFBC30ASTRLPbF a SiHFBC30ASTL-E3 a IRFBC30ASTRL a SiHFBC30ASTL = 25 °C, unless otherwise noted ° 100 ° ...
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... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient (PCB a Mounted, steady-state) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... T = 150 C 0.1 0 Drain-to-Source Voltage (V) DS Fig Typical Output Characteristics Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 4.5V ° 100 4.5V ° 100 Fig Normalized On-Resistance vs. Temperature Vishay Siliconix 100 10 ° 150 ° 0 50V DS 20µs PULSE WIDTH 0.01 4.0 5.0 6.0 7 Gate-to-Source Voltage (V) GS Fig ...
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... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 10000 0V MHZ C iss = rss = oss = 1000 Ciss 100 Coss 10 Crss Drain-to-Source Voltage (V) Fig Typical Capacitance vs. Drain-to-Source Voltage 3. 480V 300V 120V FOR TEST CIRCUIT Total Gate Charge (nC) G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 SHORTED ...
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... DS R D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91109 S10-2433-Rev. B, 25-Oct-10 125 150 ° 0.001 0. Rectangular Pulse Duration (sec Driver + - Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRFBC30AS, SiHFBC30AS, IRFBC30AL, SiHFBC30AL Vishay Siliconix 400 300 200 100 100 Starting T , Junction Temperature ( C) J Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 740 I D TOP 1.6A 2.3A 720 BOTTOM 3.6A 700 680 660 ...
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... Note Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91109. Document Number: 91109 S10-2433-Rev ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...