IRFU9210 Vishay, IRFU9210 Datasheet - Page 2

• Manufacturer Part Number: IRFU9210
• Description: MOSFET P-CH 200V 1.9A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9210

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.1A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 8.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 170pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.9 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU9210

IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
L
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
D
S
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
J
V
GS
GS
= 25 °C, I
DS
T
R
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
Reference to 25 °C, I
= - 10 V
= - 10 V
G
= 25 °C, I
= - 160 V, V
MIN.
= 24 Ω, R
V
V
V
V
V
DD
-
-
-
f = 1.0 MHz, see fig. 5
DS
DS
DS
GS
TEST CONDITIONS
= - 100 V, I
= - 200 V, V
F
= V
= - 50 V, I
= 0 V, I
V
V
= - 2.3 A, dI/dt = 100 A/µs
V
GS
DS
I
S
D
GS
D
GS
= - 1.9 A, V
= - 1.3 A, V
GS
= 41 Ω, see fig. 10
, I
= ± 20 V
= - 25 V,
= 0 V,
see fig. 6 and 13
D
D
= 0 V, T
= - 250 µA
= - 250 µA
D
I
D
D
= - 1.1 A
GS
= - 2.3 A,
= - 1.1 A
D
TYP.
= 0 V
= - 1 mA
GS
-
-
-
DS
J
G
G
= 125 °C
= 0 V
= - 160 V,
b
D
S
b
b
b
D
S
b
- 200
MIN.
- 2.0
0.98
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
5.0
50
S09-0060-Rev. A, 02-Feb-09
Document Number: 91281
- 0.23
TYP.
0.56
170
110
8.0
4.5
7.5
54
16
12
11
13
-
-
-
-
-
-
-
-
-
-
-
-
-
± 100
MAX.
- 100
- 500
- 4.0
- 1.9
- 7.6
- 5.8
S
220
3.0
8.9
2.1
3.9
1.1
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V