IRFU420APBF Vishay, IRFU420APBF Datasheet - Page 2
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IRFU420APBF
Manufacturer Part Number
IRFU420APBF
Description
MOSFET N-CH 500V 3.3A I-PAK
Manufacturer
Vishay
Specifications of IRFU420APBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3.3A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 25V
Power - Max
83W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3.3 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
3.3A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU420APBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU420APBF
Manufacturer:
Vishay Semiconductors
Quantity:
1 786
Diode Characteristics
Dynamic @ T
Document Number: 91274
Static @ T
Notes:
V
∆V
R
V
I
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
S
rr
on
fs
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
T
Starting T
SD
J
G
eff.
≤ 150°C
≤ 2.5A, di/dt ≤ 270A/µs, V
= 25Ω, I
/∆T
J
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
= 25°C, L = 45mH
AS
J
= 25°C (unless otherwise specified)
= 2.5A. (See Figure 12)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
(BR)DSS
,
Pulse width ≤ 300µs; duty cycle ≤ 2%.
C
–––
as C
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
1.4
Min. Typ. Max. Units
oss
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
0.60
–––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
340
490
while V
–––
–––
–––
330
760 1140
8.1
2.7
12
16
13
53
15
28
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
500
3.0
4.5
4.3
8.5
1.6
25
17
3.3
DS
10
is rising from 0 to 80% V
V/°C
µA
nA
nC
ns
nC
pF
ns
V
Ω
V
S
V
V
V
V
V
V
V
V
V
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
Reference to 25°C, I
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
G
D
GS
DS
GS
GS
GS
J
J
= 2.5A
= 2.5A
= 25°C, I
= 25°C, I
= 97Ω,See Fig. 10
= 21Ω
= V
= 500V, V
= 400V, V
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= 30V
= -30V
= 10V, See Fig. 6 and 13
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 2.5A, V
= 2.5A
= 250µA
= 1.5A
= 1.5A
GS
GS
DSS
= 0V to 400V
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V, T
= 0V
D
www.vishay.com
= 1mA
GS
J
G
= 0V
= 125°C
S
+L
D
S
D
)
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