IRFU9214PBF Vishay, IRFU9214PBF Datasheet - Page 5

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IRFU9214PBF

Manufacturer Part Number
IRFU9214PBF
Description
MOSFET P-CH 250V 2.7A I-PAK
Manufacturer
Vishay
Datasheets

Specifications of IRFU9214PBF

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.7A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
2.7A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
220pf @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
3 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.7 A
Power Dissipation
50000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Continuous Drain Current Id
-2.7A
Drain Source Voltage Vds
-250V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
-10V
Leaded Process Compatible
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRFU9214PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFU9214PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRFU9214PBF
Quantity:
3 000
Document Number: 91282
S10-1139-Rev. C, 17-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
0.01
0.1
10
0.00001
1
50
D = 0.50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
GS
t
d(on)
J
V
DM
DS
t
r
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
C
t
R
1
Vishay Siliconix
D
t
t
d(off)
2
t
f
+
-
www.vishay.com
V
1
DD
5

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