IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 5
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IRF840ASPBF
Manufacturer Part Number
IRF840ASPBF
Description
MOSFET N-CH 500V 8A D2PAK
Manufacturer
Vishay
Type
Power MOSFETr
Specifications of IRF840ASPBF
Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
850 mOhm @ 4.8A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1018pF @ 25V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.85 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
8 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
8A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
850mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.85Ohm
Drain-source On-volt
500V
Gate-source Voltage (max)
±30V
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF840ASPBF
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Document Number: 91066
S11-1050-Rev. D, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91066_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
8.0
6.0
4.0
2.0
0.0
91066_11
R
g
20 V
25
V
DS
10
0.1
10
t
p
1
-2
10
50
-5
T
0.05
0.02
0.01
D = 0.50
0.20
0.10
I
C
AS
D.U.T.
, Case Temperature (°C)
0.01 Ω
L
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
15 V
-4
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Driver
This document is subject to change without notice.
Single Pulse
(Thermal Response)
125
+
- V
A
DD
t
1
150
, Rectangular Pulse Duration (s)
10
-3
10
Fig. 12b - Unclamped Inductive Waveforms
-2
I
AS
Fig. 10a - Switching Time Test Circuit
90 %
10 %
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
0.1
t
p
j
= P
P
D.U.T.
DM
DM
www.vishay.com/doc?91000
Vishay Siliconix
R
x Z
D
V
t
t
d(off)
1
1
thJC
DS
/t
2
t
+ T
2
t
f
C
+
-
www.vishay.com
1
V
DD
5