IRF840ASPBF Vishay, IRF840ASPBF Datasheet - Page 5

• Manufacturer Part Number: IRF840ASPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRF840ASPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.85Ohm
• Drain-source On-volt: 500V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840ASPBF

Document Number: 91066
S11-1050-Rev. D, 30-May-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
91066_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 12a - Unclamped Inductive Test Circuit
8.0
6.0
4.0
2.0
0.0
91066_11
R
g
20 V
25
V
DS
10
0.1
10
t
p
1
-2
10
50
-5
T
0.05
0.02
0.01
D = 0.50
0.20
0.10
I
C
AS
D.U.T.
, Case Temperature (°C)
0.01 Ω
L
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
15 V
-4
IRF840AS, SiHF840AS, IRF840AL, SiHF840AL
Driver
This document is subject to change without notice.
Single Pulse
(Thermal Response)
125
+
- V
A
DD
t
1
150
, Rectangular Pulse Duration (s)
10
-3
10
Fig. 12b - Unclamped Inductive Waveforms
-2
I
AS
Fig. 10a - Switching Time Test Circuit
90 %
10 %
Fig. 10b - Switching Time Waveforms
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
10 V
V
GS
t
d(on)
Notes:
1. Duty Factor, D = t
2. Peak T
V
DS
t
r
0.1
t
p
j
= P
P
D.U.T.
DM
DM
www.vishay.com/doc?91000
Vishay Siliconix
R
x Z
D
V
t
t
d(off)
1
1
thJC
DS
/t
2
t
+ T
2
t
f
C
+
-
www.vishay.com
1
V
DD
5