IRFD9120PBF Vishay, IRFD9120PBF Datasheet - Page 8

• Manufacturer Part Number: IRFD9120PBF
• Description: MOSFET P-CH 100V 1A 4-DIP
• Manufacturer: Vishay

Specifications of IRFD9120PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Drain
• Resistance Drain-source Rds (on): 0.6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: -1A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFD9120PBF

Document Number: 91139
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
Dimensions are shown in millimeters (inches)
AS S EMBLY LOT CODE
INTERNAT IONAL
RECT IF IER
LOGO
THIS IS AN IRFD120
IRFD120
XXXX
Data and specifications subject to change without notice.
PART NUMBER
DAT E CODE
(PYWWA)
A = AS S EMBLY S IT E CODE
P = LEAD-FREE (optional)
Y = YEAR
WW = WEEK
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10/04
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