IRFU9214 Vishay, IRFU9214 Datasheet - Page 9

• Manufacturer Part Number: IRFU9214
• Description: MOSFET P-CH 250V 2.7A I-PAK
• Manufacturer: Vishay

Specifications of IRFU9214

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 220pf @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFU9214

TO-251AA (HIGH VOLTAGE)
Notes
1. Dimensioning and tolerancing per ASME Y14.5M-1994.
2. Dimension are shown in inches and millimeters.
3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the
4. Thermal pad contour optional with dimensions b4, L2, E1 and D1.
5. Lead dimension uncontrolled in L3.
6. Dimension b1, b3 and c1 apply to base metal only.
7. Outline conforms to JEDEC outline TO-251AA.
Document Number: 91362
Revision: 15-Sep-08
ECN: S-82111-Rev. A, 15-Sep-08
DWG: 5968
outermost extremes of the plastic body.
DIM.
A1
b1
b2
b3
b4
c1
c2
A
D
b
c
MIN.
2.18
0.89
0.64
0.65
0.76
0.76
4.95
0.46
0.41
0.46
5.97
MILLIMETERS
View A - A
E1
4
MAX.
2.39
1.14
0.89
0.79
1.14
1.04
5.46
0.61
0.56
0.86
6.22
Thermal PAD
D1
(Datum A)
4
0.086
0.035
0.025
0.026
0.030
0.030
0.195
0.018
0.016
0.018
0.235
MIN.
INCHES
L1
MAX.
0.094
0.045
0.035
0.031
0.045
0.041
0.215
0.024
0.022
0.034
0.245
L3
5
θ2
B
2 x e
Lead tip
C
B
E
b4
3
C
4
3 x b2
3 x b
0.010
A
L
L2
B
0.010
3
4
0.25
DIM.
Plating
D1
E1
L1
L2
L3
θ1
θ2
E
e
L
0.25
(c)
M
Section B - B and C - C
M
C
C
A
b1, b3
(b, b2)
A
MIN.
B
5.21
6.35
4.32
8.89
1.91
0.89
1.14
5
25'
0'
MILLIMETERS
B
Package Information
2.29 BSC
c1
Base
metal
5
MAX.
6.73
9.65
2.29
1.27
1.52
θ1
15'
35'
-
-
c
A
Vishay Siliconix
Seating
plane
A
A
c2
A1
C
0.205
0.250
0.170
0.350
0.075
0.035
0.045
MIN.
25'
0'
2.29 BSC
INCHES
www.vishay.com
MAX.
0.265
0.380
0.090
0.050
0.060
15'
35'
-
-
1