IRFR9214 Vishay, IRFR9214 Datasheet - Page 5

• Manufacturer Part Number: IRFR9214
• Description: MOSFET P-CH 250V 2.7A DPAK
• Manufacturer: Vishay

Specifications of IRFR9214

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 Ohm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 14nC @ 10V
• Input Capacitance (ciss) @ Vds: 220pf @ 25V
• Power - Max: 50W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 3 Ohms
• Drain-source Breakdown Voltage: - 250 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.7 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFR9214

Document Number: 91282
S-82992-Rev. B, 12-Jan-09
Fig. 9 - Maximum Drain Current vs. Case Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
0.01
0.1
10
0.00001
1
50
D = 0.50
T , Case Temperature ( C)
C
0.20
0.10
0.05
0.02
0.01
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
(THERMAL RESPONSE)
100
0.0001
SINGLE PULSE
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
0.01
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
1. Duty factor D = t / t
2. Peak T = P
Notes:
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
J
V
DM
DS
t
r
x Z
1
0.1
thJC
P
2
DM
D.U.T.
+ T
C
t
R
1
Vishay Siliconix
D
t
t
d(off)
2
t
f
+
-
www.vishay.com
V
1
DD
5