IRFD9120 Vishay, IRFD9120 Datasheet - Page 7

• Manufacturer Part Number: IRFD9120
• Description: MOSFET P-CH 100V 1A 4-DIP
• Manufacturer: Vishay
• Type: Power MOSFETr

Specifications of IRFD9120

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 600mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 1.3W
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.6Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 1A
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 4
• Package Type: HexDIP
• Power Dissipation: 1.3W
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -1A
• Drain Source Voltage Vds: -100V
• On Resistance Rds(on): 600mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFD9120

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91139.
Document Number: 91139
S10-2464-Rev. D, 25-Oct-10
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
• Compliment N-Channel of D.U.T. for driver
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• I
• dV/dt controlled by R
• D.U.T. - device under test
current
SD
Diode recovery
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
dI/dt
D =
-
g
Period
P.W.
+
I
V
V
SD
IRFD9120, SiHFD9120
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
www.vishay.com
7