IRF840LCSPBF Vishay, IRF840LCSPBF Datasheet - Page 3

• Manufacturer Part Number: IRF840LCSPBF
• Description: MOSFET N-CH 500V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF840LCSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91068
S09-0071-Rev. A, 02-Feb-09
91068_01
91068_02
10
10
10
10
10
10
-1
-1
1
0
Fig. 2 - Typical Output Characteristics
10
1
0
10
Fig. 1 - Typical Output Characteristics
Top
Bottom
-1
-1
Top
Bottom
V
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
DS
DS ,
V
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
GS
, Drain-to-Source Voltage (V)
V
GS
Drain-to-Source Voltage (V)
10
10
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
0
0
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
10
10
25 °C
150 °C
1
1
4.5 V
4.5 V
91068_04
91068_03
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Fig. 3 - Typical Transfer Characteristics
1
0
- 60 - 40 - 20 0
4
I
V
D
150
GS
= 8.0 A
= 10 V
°
V
C
5
T
GS ,
J ,
Junction Temperature (°C)
Gate-to-Source Voltage (V)
25
6
20 40 60 80 100 120 140 160
°
C
7
Vishay Siliconix
20 µs Pulse Width
V
8
DS
=
50 V
www.vishay.com
9
10
3