SI7178DP-T1-GE3 Vishay, SI7178DP-T1-GE3 Datasheet

MOSFET N-CH 100V 60A PPAK 8SOIC

SI7178DP-T1-GE3

Manufacturer Part Number
SI7178DP-T1-GE3
Description
MOSFET N-CH 100V 60A PPAK 8SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI7178DP-T1-GE3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
60A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
72nC @ 10V
Input Capacitance (ciss) @ Vds
2870pF @ 50V
Power - Max
104W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.014 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14.9 A
Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
60A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7178DP-T1-GE3TR

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Part Number:
SI7178DP-T1-GE3
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Part Number:
SI7178DP-T1-GE3
Quantity:
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Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 69951
S-80678-Rev. A, 31-Mar-08
Ordering Information: Si7178DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
V
DS
100
8
(V)
6.15 mm
D
7
D
C
= 25 °C.
0.014 at V
6
D
PowerPAK SO-8
R
Bottom View
5
DS(on)
http://www.vishay.com/ppg?73257
D
GS
(Ω)
1
J
= 10 V
= 150 °C)
S
b, f
2
S
N-Channel 100-V (D-S) MOSFET
3
S
5.15 mm
I
D
4
60
(A)
G
a
Steady State
d, e
t ≤ 10 s
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
A
Q
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
47.5 nC
= 25 °C, unless otherwise noted
g
(Typ.)
New Product
Symbol
R
R
thJA
thJC
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• Halogen-free
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Primary Side Switch
• POL
Intermediate Bus Converter
Typical
0.9
15
g
Tested
®
Power MOSFET
- 55 to 150
14.9
11.9
6.25
5.2
4.0
Limit
± 20
66.5
100
104
260
60
48
80
60
40
80
b, c
b, c
b, c
b, c
b, c
G
Maximum
N-Channel MOSFET
1.2
20
Vishay Siliconix
D
S
Si7178DP
www.vishay.com
°C/W
Unit
Unit
RoHS
mJ
COMPLIANT
°C
W
V
A
1

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SI7178DP-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7178DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si7178DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 69951 S-80678-Rev. A, 31-Mar-08 New Product 4000 3200 2400 1600 800 2.0 1.7 1 1.1 0.8 0 Si7178DP Vishay Siliconix 125 ° ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance ...

Page 4

... Si7178DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.2 - 0 250 µ 1 Temperature (°C) J Threshold Voltage 100 0.01 www.vishay.com 4 New Product ° ...

Page 5

... T - Case Temperature (°C) C Current Derating* 3.0 2.4 1.8 1.2 0.6 0.0 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7178DP Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power, Junction-to-Ambient www.vishay.com 150 ...

Page 6

... Si7178DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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