IRF840ALPBF Vishay, IRF840ALPBF Datasheet - Page 2

• Manufacturer Part Number: IRF840ALPBF
• Description: MOSFET N-CH 500V 8A TO-262
• Manufacturer: Vishay

Specifications of IRF840ALPBF

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 850 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1018pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Through Hole
• Package / Case: I²Pak, TO-262 (3 straight leads + tab)
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.85 Ohm @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 8 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Continuous Drain Current Id: 8A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 850mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRF840ALPBF

IRF840AS/LPbF
Avalanche Characteristics
Thermal Resistance
Diode Characteristics
Document Number: 91066
Dynamic @ T
Static @ T
R
R
I
E
I
E
I
I
V
t
Q
t
I
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
DSS
GSS
AR
S
SM
rr
on
d(on)
r
d(off)
f
AS
AR
fs
θJC
θJA
SD
(BR)DSS
GS(th)
rr
DS(on)
g
gs
gd
iss
oss
rss
oss
oss
oss
(BR)DSS
eff.
/∆T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Junction-to-Case
Junction-to-Ambient ( PCB Mounted, steady-state)*
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
2.0
3.7
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
1018 –––
1490 –––
0.58
–––
–––
–––
422
–––
–––
–––
–––
155
–––
––– 0.85
–––
–––
–––
–––
––– -100
2.0
8.0
11
23
26
19
42
56
633
–––
–––
250
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
3.0
9.0
4.0
8.0
25
38
18
32
V/°C
µC
µA
nA
nC
ns
pF
ns
V
A
Ω
S
Typ.
V
V
–––
–––
–––
Typ.
–––
–––
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
V
V
R
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
R
V
V
I
D
D
J
J
DS
DS
GS
DD
GS
DS
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
G
D
= 8.0A
= 25°C, I
= 25°C, I
= 8.0A
= 31Ω,See Fig. 10
= 9.1Ω
= 50V, I
= 400V
= 25V
= 0V, I
= 10V, I
= V
= 500V, V
= 400V, V
= 30V
= -30V
= 10V, See Fig. 6 and 13 „†
= 250V
= 0V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
= 8.0A, V
= 8.0A
Conditions
Conditions
= 250µA
= 4.8A
= 4.8A
GS
GS
= 0V to 480V …†
Max.
Max.
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
510
8.0
1.0
40
13
= 0V
= 0V, T
D
www.vishay.com
= 1mA†
GS
„
„†
J
G
= 0V „
= 125°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)
2