IRFU9010 Vishay, IRFU9010 Datasheet - Page 6
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IRFU9010
Manufacturer Part Number
IRFU9010
Description
MOSFET P-CH 50V 5.3A I-PAK
Manufacturer
Vishay
Series
HEXFET®r
Specifications of IRFU9010
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
500 mOhm @ 2.8A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
5.3A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
9.1nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
50 V
Continuous Drain Current
5.3 A
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRFU9010
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFU9010
Manufacturer:
IR
Quantity:
2 700
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Vishay Siliconix
www.vishay.com
6
10 %
90 %
Fig. 15b - Switching Time Test Circuit
Fig. 15a - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
g
- 10 V
V
t
GS
d(on)
Fig. 14 - Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration
V
DS
t
r
D.U.T.
R
D
t
d(off)
t
f
+
-
V
DD
- 10 V
V
Fig. 16a - Basic Gate Charge Waveform
G
12 V
V
Fig. 16b - Gate Charge Test Circuit
GS
Same type as D.U.T.
Q
Current regulator
GS
0.2 µF
- 3 mA
Current sampling resistors
Charge
50 kΩ
Q
Q
GD
G
0.3 µF
I
G
S10-1135-Rev. C, 10-May-10
Document Number: 91378
D.U.T.
I
D
+
-
V
DS