SI7450DP-T1-GE3 Vishay, SI7450DP-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI7450DP-T1-GE3
• Description: MOSFET N-CH 200V 3.2A PPAK 8SOIC
• Manufacturer: Vishay

Specifications of SI7450DP-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 10V
• Power - Max: 1.9W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3.2A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4.5V
• Power Dissipation Pd: 1.9W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7450DP-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71432
S09-0227-Rev. E, 09-Feb-09
0.20
0.15
0.10
0.05
0.00
50
10
20
16
12
1
8
4
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 4.0 A
0.2
On-Resistance vs. Drain Current
= 100 V
8
V
SD
15
T
Q
J
g
- Source-to-Drain Voltage (V)
= 150 °C
V
0.4
I
D
- Total Gate Charge (nC)
GS
Gate Charge
- Drain Current (A)
16
= 6 V
0.6
30
24
0.8
V
T
45
GS
J
= 25 °C
32
= 10 V
1.0
1.2
40
60
2500
2000
1500
1000
0.25
0.20
0.15
0.10
0.05
0.00
500
2.5
2.0
1.5
1.0
0.5
0.0
0
-50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
-25
GS
= 4.0 A
C
= 10 V
rss
40
2
T
V
V
0
J
DS
GS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
80
4
50
C
C
Vishay Siliconix
oss
iss
120
I
D
6
75
= 4.0 A
Si7450DP
www.vishay.com
100
160
8
125
150
200
10
3