SI7462DP-T1-E3 Vishay, SI7462DP-T1-E3 Datasheet

MOSFET N-CH 200V 2.6A PPAK 8SOIC

SI7462DP-T1-E3

Manufacturer Part Number
SI7462DP-T1-E3
Description
MOSFET N-CH 200V 2.6A PPAK 8SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI7462DP-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
130 mOhm @ 4.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Power - Max
1.9W
Mounting Type
Surface Mount
Package / Case
PowerPAK® SO-8
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.13 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.6 A
Power Dissipation
1900 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
4.1A
Drain Source Voltage Vds
200V
On Resistance Rds(on)
142mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI7462DP-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7462DP-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72136
S09-0227-Rev. C, 09-Feb-09
Ordering Information: Si7462DP-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy (Duty Cycle ≤ 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
200
(V)
8
6.15 mm
D
7
D
6
D
PowerP AK SO-8
Bottom V i e w
Si7462DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
5
0.142 at V
0.130 at V
D
R
DS(on)
1
J
a
S
= 150 °C)
GS
a
GS
2
(Ω)
= 6.0 V
= 10 V
S
N-Channel 200-V (D-S) MOSFET
3
S
a
5.15 mm
4
G
a
b,c
A
I
= 25 °C, unless otherwise noted
D
4.1
3.9
Steady State
Steady State
(A)
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 85 °C
= 25 °C
= 85 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Low Thermal Resistance PowerPAK
• Primary Side Switch
Symbol
Symbol
T
R
R
Available
Package with Low 1.07 mm Profile
PWM Optimized For Fast Switching
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
AS
I
DS
GS
AS
D
S
D
stg
®
Power MOSFETs
Typical
10 s
4.1
3.0
4.8
2.6
1.7
4.0
21
55
G
N-Channel MOSFET
- 55 to 150
± 20
200
260
1.8
12
6
D
S
Steady State
Maximum
2.6
1.9
1.9
1.0
2.1
1.6
26
65
Vishay Siliconix
Si7462DP
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
1

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SI7462DP-T1-E3 Summary of contents

Page 1

... Bottom Ordering Information: Si7462DP-T1-E3 (Lead (Pb)-free) Si7462DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy (Duty Cycle ≤ Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si7462DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... Gate Charge 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72136 S09-0227-Rev. C, 09-Feb- °C J 0.8 1.0 1.2 Si7462DP Vishay Siliconix 1600 1400 1200 C iss 1000 800 600 400 C rss C 200 oss Drain-to-Source Voltage (V) DS Capacitance 2 4 ...

Page 4

... Si7462DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.8 0.6 0.4 0.2 0.0 - 0.2 - 0.4 - 0.6 - 0.8 - 1.0 - 1.2 - 1 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. www.vishay.com 4 = 250 μ 100 125 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72136. Document Number: 72136 S09-0227-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7462DP Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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